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PROPER CHOICE OF THE MEASURING FREQUENCY FOR DETERMINING FR OF BIPOLAR TRANSISTORSREIN HM.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 75-82; BIBL. 5 REF.Article

1/F NOISE IN MODULATION-DOPED FIELD EFFECT TRANSISTORSDUH KH; VAN DER ZIEL A; MORKOC H et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 12-13; BIBL. 4 REF.Article

NOUVELLES ETUDES EXPERIMENTALES DU MECANISME DU BRUIT 1/FKOGAN SH M.1977; USP. FIZ. NAUK; S.S.S.R.; DA. 1977; VOL. 123; NO 1; PP. 131-136; BIBL. 14 REF.Article

1/F NOISE IN HEMT-TYPE GAAS FETS AT LOW DRAIN BIASVAN DER ZIEL A.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 385-386; BIBL. 2 REF.Article

RELIABILITY OF N-CHANNEL AND P-CHANNEL MOSTS IN CMOS INTEGRATED CIRCUITSSTOJADINOVIC N; DIMITRIJEV S; MIJALKOVIC S et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 357-364; ABS. RUS; BIBL. 14 REF.Article

ORIGIN OF 1/F NOISE IN BIPOLAR TRANSISTORSSTOISIEK M; WOLF D.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1753-1757; BIBL. 7 REF.Article

RESPONSE OF A CORRELATED DOUBLE SAMPLING CIRCUIT TO 1/F NOISEKANSY RJ.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 373-375; BIBL. 5 REF.Article

MEASUREMENT OF 1/F NOISE USING A CONTACT-FREE CURRENT-DRIVING SCHEMEHASHIGUSHI S; SUZUKI Y.1982; IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT; ISSN 0018-9456; USA; DA. 1982; VOL. 31; NO 3; PP. 210-212; BIBL. 4 REF.Article

MOBILITY-FLUCTUATION 1/F NOISE IN NONUNIFORM NONLINEAR SAMPLES AND IN MESA STRUCTURESVAN DER ZIEL A; VAN VLIET CM.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. K53-K55; BIBL. 4 REF.Article

EFFECTS OF EMITTER EDGE DISLOCATIONS ON THE LOW-FREQUENCY NOISE OF SILICON PLANAR N-P-N TRANSISTORSSTOJADINOVIC ND.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 12; PP. 340-342; BIBL. 13 REF.Article

CALCULATIONS OF EXPERIMENTAL IMPLICATIONS OF TENSOR PROPERTIES OF RESISTANCE FLUCTUATIONSWEISSMAN MB; BLACK RD; SNOW WM et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6276-6279; BIBL. 6 REF.Article

EFFECTS OF PHOSPHORUS GETTERING ON 1/F NOISE IN BIPOLAR TRANSISTORSSTOISIEK M; WOLF D.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1147-1149; BIBL. 4 REF.Article

ON THE SUPERPOSITION OF RELAXATION SPECTRA AS AN EXPLANATION FOR 1/F NOISEWALMA AA.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 9; PP. 1435-1443; ABS. FRE; BIBL. 17 REF.Article

ON LOW-FREQUENCY NOISE IN TUNNEL DIODESKLEINPENNING TGM.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 7; PP. 927-931; BIBL. 15 REF.Article

LOW-FREQUENCY NOISE SPECTRUM OF GAAS FETSGRAFFEUIL J.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 11; PP. 387-388; BIBL. 5 REF.Article

1/F NOISE OF CONTINUOUS-WAVE SEMICONDUCTOR LASERS.TENCHIO G.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 20; PP. 614-616; BIBL. 11 REF.Article

LOW FREQUENCY NOISE IN THE SINGLE INJECTION DIODE WITH TRAPS LYING ABOVE THE FERMI LEVEL.SHARMA YK.1976; INDIAN J. TECHNOL.; INDIA; DA. 1976; VOL. 14; NO 11; PP. 576-577; BIBL. 11 REF.Article

Low-frequency noise controls on-off intermittency of bifurcating systemsAUMAITRE, Sébastien; PETRELIS, Francois; MALLICK, Kirone et al.Physical review letters. 2005, Vol 95, Num 6, pp 064101.1-064101.4, issn 0031-9007Article

The quantum 1/f effect and the general nature of 1/f noiseHANDEL, P. H.AEU. Archiv für Elektronik und Übertragungstechnik. 1989, Vol 43, Num 5, pp 261-270, issn 0001-1096, 10 p.Article

On 1/f noise and detectivity in reverse-biased pn-junction photodiodesKLEINPENNING, T. G. M.Physica, B + C. 1983, Vol 121, Num 1-2, pp 81-88, issn 0378-4363Article

Giant 1/f noise in two-dimensional polycrystalline mediaSNARSKII, A; BEZSUDNOV, I.Physica. B, Condensed matter. 2008, Vol 403, Num 19-20, pp 3519-3521, issn 0921-4526, 3 p.Article

MEASUREMENT OF THE TEMPERATURE FLUCTUATION IN A RESISTOR GENERATING 1/F FLUCTUATIONHASHIGUCHI S.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 5; PART. 2; PP. 284-286; BIBL. 7 REF.Article

1/F NOISE IN THIN OXIDE P-CHANNEL METAL-NITRIDE-OXIDE-SILICON TRANSISTORSMAES HE; USMANI SH.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1937-1949; BIBL. 30 REF.Article

1/F NOISE IN SILICON WAFERSBLACK RD; WEISSMAN MB; RESTLE PJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6280-6285; BIBL. 26 REF.Article